Electronic Materials and Devices Laboratory (EMDL)

Our group mainly focuses on designing and engineering of dielectric materials and interfaces of electrode-dielectric layers for neuromorphic memory and computing applications. We explore the thin film structures of metal oxides (HfO2, WO3, VO2 etc.), perovskites and 2D materials with capacitive and metal-oxide-semiconductor structures. We aim to develop crossbar arrays of these devices and investigate neuromorphic computing characteristics experimentally and computationally. 

Our group also aims to discover and design new ferroelectric, relaxor and antiferroelectric material and understand their potential in ferroelectric memory devices (e.g. FeRAM), high energy density capacitor applications. We also focus on development of piezoelectric materials for actuator and sensor applications.