Electronic Materials and Devices Laboratory (EMDL)
Our Vision
1. Neuromorphic Memory & Computing Devices
The Resistive Random Access Memory (RRAM) and Ferroelectric Random Access Memory (FeRAM) are emerging technologies for simpler structure, faster, highly scalable, and energy-efficient data storage and processing. These technologies have promising potential in neuromorphic memory and computing applications. Inspired by the human brain’s neural network, the neuromorphic computing device comprises a capacitive structure with a dielectric layer sandwiched between two metal electrodes. Our group mainly focuses on designing and engineering of dielectric materials and interface of electrode-dielectric layers for neuromorphic memory and computing applications. We are exploring the thin film structures of metal oxides (HfO2, WO3, VO2 etc.), perovskites and 2D materials with capacitive and metal-oxide-semiconductor structures. We aim to develop crossbar arrays of these devices and investigate neuromorphic computing characteristics experimentally and computationally.
2. Ferroelectric and Piezoelectric Materials
Our group aims to discover and design new ferroelectric, relaxor and antiferroelectric material and understand their potential in ferroelectric memory devices (e.g. FeRAM), high energy density capacitor applications. We also focus on development of piezoelectric materials for actuator and sensor applications.
3. Magnetoelectric Layered structures
We also focus on magnetoelectric (ME) layered structure, nanoelectromechanical systems (NEMS) for sensor applications in biomedical field. The epitaxial thin film of piezoelectric material over magnetostrictive layer has great potential in low magnetic field sensing and energy harvesting.